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Ultra-High-Efficiency White
LED Drivers
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1; V IN = 3.3V, SETI = BITA = BITB = BITC = SEL = IN, MODE = GND, C OUT = 4.7μF, C REF = 0.22μF, T A = 0 ° C to +85 ° C ,
unless otherwise noted. Typical values are at T A = +25 ° C.)
PARAMETER
SEL Input Logic Low Level
SEL Input Logic Midlevel
2.7V < V IN < 5.5V
2.7V < V IN < 5.5V
CONDITIONS
MIN
0.50
TYP
MAX
0.4
1.85
UNITS
V
V
SEL Input Logic High Level
SEL Input Bias Current
2.7V < V IN < 5.5V
SEL = GND, current out of the pin
SEL = IN, current into the pin
2.05
5
10
V
μA
FULL-SCALE LED CURRENT ADJUSTMENT
V LD_ = 80mV, SETI = BITA = BITB = BITC = IN
V LD _ = 80mV, R SETI = 278k ? ±0.1%, BITA = BITB =
BITC = IN
16.5
22.5
18
25
19.5
27.5
LD1 to LD8 Output Current
V LD _ = 80mV, R SETI = 1.8M ? ±0.1%, BITA = BITB =
BITC = IN
V LD_ = 80mV, R SETI = 597k ? ±0.1%, BITA = BITB =
BITC = IN
12.5
16.5
14
18
15.5
19.5
mA
V LD1 = 1V, R SETI = 10k ? , BITA = BITB = BITC = IN
26
SETI = GND
0.42
0.50
0.60
LD1 to LD8 Regulation Voltage
SETI High-Level Threshold
(18mA LED Default Current)
SETI Low-Level Threshold
(0.5mA LED Default Current)
SETI Output Current
SETI = IN, I LX = 120mA (MAX1984),
110mA (MAX1985), 98mA (MAX1986)
2.7V < V IN < 5.5V
2.7V < V IN < 5.5V
SETI = GND
80
V IN - 0.4
50
40
100
70
120
125
100
mV
V
mV
μA
OUTPUT CURRENT SOURCE
LD1 to LD8 On-Resistance
LD1 to LD8 Current-Source
Compliance
LD1 to LD8 Leakage Current
V LD_ = 50mV, V OUT = 3.5V
BITA = BITB = BITC = IN, 80mV < V LD_ < 1V
(Note 1)
BITA = BITB = BITC = GND
3
0.3
0.01
4
5
1
?
%
μA
DIGITAL BRIGHTNESS CONTROL
2-Bit Control DAC LSB
3-Bit Control DAC LSB
MODE = SETI = BITB = IN, BITA = BITC = GND
(Note 2)
SETI = BITC = IN, MODE = BITA = BITB = GND
(Note 2)
26
7
33
14
39
21
%
%
DPWM BRIGHTNESS CONTROL
DPWM Input Supply Range
MODE = BITC = IN
2.3
5.5
V
DPWM Shutdown Duty Cycle
BITC = GND
3
5
7
%
_______________________________________________________________________________________
3
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